Abstract
Impedance spectroscopy analysis of the dielectric properties of a
Ba2BiTaO6 ceramic was performed in the temperature range from room
temperature to 500 K. The sample was prepared using conventional solid
state synthesis under air and the X-ray diffraction shows the presence
of Ba5Ta4O15 as a minor secondary phase (0.09%). The impedance data
clearly show contributions of the grain and grain boundary. The results
indicate that the conduction in Ba2BiTaO6 is due to hopping of oxygen
vacancies and that the impurities not influence the conduction
mechanism. (C) 2011 Elsevier Ltd. All rights reserved.
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