Abstract
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δdoped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more compact p-i-n-heterodiodes.
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