Article,

HIGH-FIELD TRANSPORT TRANSIENT OF MINORITY-CARRIERS IN P-GAAS

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APPLIED PHYSICS LETTERS, 59 (5): 558-560 (1991)
DOI: 10.1063/1.105385

Abstract

The time evolution of the minority electron velocity and temperature in p-GaAs towards the steady state is calculated for high-electric fields and doping concentrations of 1.5 x 10(17) and 1.5 X 10(18) cm-3. It is shown that the velocity overshoot is less pronounced for high doping concentration. The electron-hole interaction reduces the overshoot effect, which indicates its role in the high-field transport transient of minority carriers in p-GaAs.

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