Abstract
The time evolution of the minority electron velocity and temperature in
p-GaAs towards the steady state is calculated for high-electric fields
and doping concentrations of 1.5 x 10(17) and 1.5 X 10(18) cm-3. It is
shown that the velocity overshoot is less pronounced for high doping
concentration. The electron-hole interaction reduces the overshoot
effect, which indicates its role in the high-field transport transient
of minority carriers in p-GaAs.
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