Article,

Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe

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Phys. Rev. Lett., 106 (12): 126803 (March 2011)
DOI: 10.1103/PhysRevLett.106.126803

Abstract

We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

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