%0 Journal Article %1 D2TC03255D %A Gangwar, Vinod K. %A Kumar, Shiv %A Singh, Mahima %A Pal, Debarati %A Ghosh, Labanya %A Singh, Prajyoti %A Yufeng, Zhang %A Chen, Chaoyu %A Schwier, Eike F. %A Shimada, Kenya %A Shahi, Prashant %A Uwatoko, Yoshiya %A Patil, Swapnil %A Ghosh, Anup K. %A Chatterjee, Sandip %D 2022 %I The Royal Society of Chemistry %J J. Mater. Chem. C %K a b %N 45 %P 17281-17290 %R 10.1039/D2TC03255D %T Roles of surface and bulk states in giant magnetoresistance and anomalous hall effect in antiferromagnetically ordered Bi$_1.9$Dy$_0.1$Te$_3$ topological insulators %U http://dx.doi.org/10.1039/D2TC03255D %V 10 %X A wide variety of emerging spintronic device concepts will greatly benefit from the use of materials with an anomalous Hall effect and large magnetoresistance. In this regard, a magnetic topological insulator is a potential candidate, leading to a better way to manipulate spin. The different roles of surface and bulk states in Bi1.9Dy0.1Te3 topological insulators are determined by investigating electronic states, magnetotransport properties, Seebeck coefficient and magnetization. Magnetoresistance attains a huge value ∼1500% at a magnetic field of 7 T, which is attributed to the surface state. The magnetization behavior clearly suggests the existence of an antiferromagnetic state. The observed anomalous Hall effect is established as the contribution from the bulk state. Furthermore, it is demonstrated that there is no appreciable energy gap at the Dirac point of the topological surface.

@article{D2TC03255D, abstract = {A wide variety of emerging spintronic device concepts will greatly benefit from the use of materials with an anomalous Hall effect and large magnetoresistance. In this regard{,} a magnetic topological insulator is a potential candidate{,} leading to a better way to manipulate spin. The different roles of surface and bulk states in Bi1.9Dy0.1Te3 topological insulators are determined by investigating electronic states{,} magnetotransport properties{,} Seebeck coefficient and magnetization. Magnetoresistance attains a huge value ∼1500% at a magnetic field of 7 T{,} which is attributed to the surface state. The magnetization behavior clearly suggests the existence of an antiferromagnetic state. The observed anomalous Hall effect is established as the contribution from the bulk state. Furthermore{,} it is demonstrated that there is no appreciable energy gap at the Dirac point of the topological surface.}, added-at = {2023-11-22T16:41:33.000+0100}, author = {Gangwar, Vinod K. and Kumar, Shiv and Singh, Mahima and Pal, Debarati and Ghosh, Labanya and Singh, Prajyoti and Yufeng, Zhang and Chen, Chaoyu and Schwier, Eike F. and Shimada, Kenya and Shahi, Prashant and Uwatoko, Yoshiya and Patil, Swapnil and Ghosh, Anup K. and Chatterjee, Sandip}, biburl = {https://www.bibsonomy.org/bibtex/2e580d84a49b37af1bb49bc78cf3de976/ctqmat}, day = 21, description = {Roles of surface and bulk states in giant magnetoresistance and anomalous hall effect in antiferromagnetically ordered Bi1.9Dy0.1Te3 topological insulators - Journal of Materials Chemistry C (RSC Publishing)}, doi = {10.1039/D2TC03255D}, interhash = {b045070ecc6578008000b21e776e9d9b}, intrahash = {e580d84a49b37af1bb49bc78cf3de976}, journal = {J. Mater. Chem. C}, keywords = {a b}, month = {10}, number = 45, pages = {17281-17290}, publisher = {The Royal Society of Chemistry}, timestamp = {2023-11-22T16:41:33.000+0100}, title = {Roles of surface and bulk states in giant magnetoresistance and anomalous hall effect in antiferromagnetically ordered Bi$_{\mathbf{1.9}}$Dy$_{\mathbf{0.1}}$Te$_{\mathbf{3}}$ topological insulators}, url = {http://dx.doi.org/10.1039/D2TC03255D}, volume = 10, year = 2022 }