%0 Book %1 Szy2010 %A Szyszka, B. %A Polenzky, C. %A Loebmann, P. %A Götzendorfer, S. %A Elsaesser, C. %A Körner, W. %C Staefa-Zuerich %D 2010 %I Trans Tech Publications Switzerland, on behalf of Techna Group, Faenza, Italy %J Advances in science and technology. %K ploebmann %T Advances in science and technology %U http://www.worldcat.org/search?qt=worldcat_org_all&q=16620356&dblist=638&fq=dt%3Aser&qt=facet_dt%3A %V 75 (5th Forum on New Materials, 2010, Part D) %X State of the art optoelectronic applications such as thin film solar cells, flat panel displays, and light emitting diodes suffer from the non-availability of p-type oxide materials on the industrial scale. Novel technologies such as transparent electronics, UV light emitting diodes, and improved thin film solar cells using wide band gap p-type oxide layers as front contact will be available once p-type oxide layers with proper layer and interface properties can be obtained on an industrial scale. In this paper, we report on our progress towards p-type oxide layers for industrial applications. We address the first principles density functional theory modeling of ZnO based layers where a pathway towards p-conductivity is seen taking the nitrogen doping of grain boundaries into account. The second part of the paper is on the synthesis of p-type Delafossite layers such as CuCr1-xAlxO2:Mg by Sol-Gel and CuCrO2 by hollow cathodes gas flow sputtering. We report on the depositionprocesses and film properties obtained. Both methods reveal p-type conductivity by means of Seebeck-coefficient measurements.

@book{Szy2010, abstract = {State of the art optoelectronic applications such as thin film solar cells, flat panel displays, and light emitting diodes suffer from the non-availability of p-type oxide materials on the industrial scale. Novel technologies such as transparent electronics, UV light emitting diodes, and improved thin film solar cells using wide band gap p-type oxide layers as front contact will be available once p-type oxide layers with proper layer and interface properties can be obtained on an industrial scale. In this paper, we report on our progress towards p-type oxide layers for industrial applications. We address the first principles density functional theory modeling of ZnO based layers where a pathway towards p-conductivity is seen taking the nitrogen doping of grain boundaries into account. The second part of the paper is on the synthesis of p-type Delafossite layers such as CuCr1-xAlxO2:Mg by Sol-Gel and CuCrO2 by hollow cathodes gas flow sputtering. We report on the depositionprocesses and film properties obtained. Both methods reveal p-type conductivity by means of Seebeck-coefficient measurements.}, added-at = {2012-11-27T14:49:06.000+0100}, address = {Staefa-Zuerich}, author = {Szyszka, B. and Polenzky, C. and Loebmann, P. and Götzendorfer, S. and Elsaesser, C. and Körner, W.}, biburl = {https://www.bibsonomy.org/bibtex/2fd235210bdcdd77bd57c5460e7e55fe7/lctm}, interhash = {b3bc21eeaccb96a9d7fbdb11e10beb5c}, intrahash = {fd235210bdcdd77bd57c5460e7e55fe7}, issn = {16620356}, journal = {Advances in science and technology.}, keywords = {ploebmann}, publisher = {Trans Tech Publications Switzerland, on behalf of Techna Group, Faenza, Italy}, refid = {637619400}, timestamp = {2012-11-27T14:49:06.000+0100}, title = {Advances in science and technology}, url = {http://www.worldcat.org/search?qt=worldcat_org_all&q=16620356&dblist=638&fq=dt%3Aser&qt=facet_dt%3A}, volume = {75 (5th Forum on New Materials, 2010, Part D)}, year = 2010 }