%0 Journal Article %1 WOS:000089432000088 %A de Sousa, JS %A Wang, H %A Farias, GA %A Freire, VN %A da Silva, EF %C RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS %D 2000 %I ELSEVIER %J APPLIED SURFACE SCIENCE %K Si/SiO2 annealing blueshift; diffusion effects; emission energy in interface oxygen quantum silicon; smoothing; toning} wells; {exciton %N 1-4 %P 469-474 %R 10.1016/S0169-4332(00)00477-3 %T Strong exciton energy blue shift in annealed Si/SiO2 single quantum wells %V 166 %X A theoretical study is presented on how the annealing-induced interfacial transition region changes the confined ground state exciton in Si/SiO2 single quantum wells (QWs). The interface thickness and the mean well width confinement depend on the time and temperature of annealing, as well as on the diffusion coefficient of oxygen in silicon. It is shown that an annealing-related interface width increase of a few Angstroms can strongly blue shift (hundreds of milli-electron volts) the confined ground state exciton energy in Si/SiO2 single quantum wells. The results allow to suggest that annealing processes can be used to tune (from red to blue) the light emission in Si/SiO2 single quantum wells. (C) 2000 Elsevier Science B.V. All rights reserved.

@article{WOS:000089432000088, abstract = {A theoretical study is presented on how the annealing-induced interfacial transition region changes the confined ground state exciton in Si/SiO2 single quantum wells (QWs). The interface thickness and the mean well width confinement depend on the time and temperature of annealing, as well as on the diffusion coefficient of oxygen in silicon. It is shown that an annealing-related interface width increase of a few Angstroms can strongly blue shift (hundreds of milli-electron volts) the confined ground state exciton energy in Si/SiO2 single quantum wells. The results allow to suggest that annealing processes can be used to tune (from red to blue) the light emission in Si/SiO2 single quantum wells. (C) 2000 Elsevier Science B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS}, author = {de Sousa, JS and Wang, H and Farias, GA and Freire, VN and da Silva, EF}, biburl = {https://www.bibsonomy.org/bibtex/2f3df9d59c098f01ec95a3b7abcd3165e/ppgfis_ufc_br}, doi = {10.1016/S0169-4332(00)00477-3}, interhash = {bd8a9c983a5cd2f09154d11ee680a51b}, intrahash = {f3df9d59c098f01ec95a3b7abcd3165e}, issn = {0169-4332}, journal = {APPLIED SURFACE SCIENCE}, keywords = {Si/SiO2 annealing blueshift; diffusion effects; emission energy in interface oxygen quantum silicon; smoothing; toning} wells; {exciton}, note = {7th International Conference on the Formation of Semiconductor Interfaces (ICFSI-7), GOTHENBURG, SWEDEN, JUN 21-25, 1999}, number = {1-4}, organization = {Chalmers Univ Technol; Goteborg Univ; Royal Acad Sci, Nobel Inst Phys; Swedish Nat Sci Res Council; Swedish Res Council Engn Sci}, pages = {469-474}, publisher = {ELSEVIER}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Strong exciton energy blue shift in annealed Si/SiO2 single quantum wells}, tppubtype = {article}, volume = 166, year = 2000 }