Abstract
In this work, we address modal parameter fluctuations in statistical
distributions describing charge-to-breakdown (Q(BD)) and/or
time-to-breakdown (t(BD)) during the dielectric breakdown regime of
ultra-thin oxides, which are of high interest for the advancement of
electronic technology. We reobtain a generalized Weibull distribution
(q-Weibull), Which properly describes (t(BD)) data when oxide thickness
fluctuations are present, in order to improve reliability assessment of
ultra-thin oxides by time-to-breakdown (tBD) extrapolation and area
scaling. The incorporation Of fluctuations allows a physical
interpretation of the q-Weibull distribution in connection with the
Tsallis Statistics. In Support to Our results, we analyze t(BD) data of
SiO2-based MOS devices obtained experimentally and theoretically through
a percolation model, demonstrating,in advantageous description of the
dielectric breakdown by the q-Weibull distribution. (c) 2005 Elsevier
B.V. All rights reserved.
Users
Please
log in to take part in the discussion (add own reviews or comments).