Abstract
A theoretical investigation on the confinement properties of
GaSb/AlxGa1-xSb single quantum wells (QWs) with smooth interfaces is
performed. Error function (erf)-like interfacial aluminum molar fraction
variations in the QWs, from which it is possible to obtain the carriers
effective masses and confinement potential profiles, are assumed. It is
shown that the existence of smooth interfaces blue shifts considerably
the confined carriers and exciton energies, an effect which is stronger
in thin QWs. (C) 2000 Elsevier Science B.V. All rights reserved.
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