Abstract
We present a program that uses an optimization algorithm to fit rocking
curves of ion-implanted semiconductors. This is an inverse problem that
cannot be solved by simple methods. However, using recursion formulae
for rocking curve calculations and a model of ion distribution after
implantation, it is possible to fit experimental data with a
general-purpose optimization method. In our case, we use a modified
version of the genetic algorithm, which has been shown to be a good
technique for this problem. The program also calculates rocking curves
for a given ion profile, such as those generated by ion implantation
simulation programs. (C) 2004 Elsevier B.V. All rights reserved.
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