%0 Journal Article %1 MOS08a %A Moshe, O. %A Rich, D. H. %A Damilano, B. %A Massies, J. %D 2008 %J Phys.~Rev.~B %K III-V aluminium band cathodoluminescence; compounds; dots; elongation; excitons; expansion; functions; gallium gap ground light microcracks; oscillator polarisation; quantum semiconductor semiconductors semiconductors; states; strength; strengths; tensile thermal wave wide %N 15 %P 155322 %R 10.1103/physrevb.77.155322 %T Effect of uniaxial stress on the polarization of light emitted from GaN/AlN quantum dots grown on Si(111) %V 77

@article{MOS08a, added-at = {2009-03-03T17:19:04.000+0100}, author = {Moshe, O. and Rich, D. H. and Damilano, B. and Massies, J.}, biburl = {https://www.bibsonomy.org/bibtex/2129daa0df9e685a8723d56a0cae9bb41/bronckobuster}, doi = {10.1103/physrevb.77.155322}, interhash = {eb8929e83eb70d401e0a6ffb991a31a3}, intrahash = {129daa0df9e685a8723d56a0cae9bb41}, journal = {Phys.~Rev.~B}, keywords = {III-V aluminium band cathodoluminescence; compounds; dots; elongation; excitons; expansion; functions; gallium gap ground light microcracks; oscillator polarisation; quantum semiconductor semiconductors semiconductors; states; strength; strengths; tensile thermal wave wide}, number = 15, pages = 155322, timestamp = {2009-03-03T17:20:14.000+0100}, title = {Effect of uniaxial stress on the polarization of light emitted from {GaN/AlN} quantum dots grown on {Si(111)}}, volume = 77, year = 2008 }