Abstract
We present the results of the calculation of the low-temperature
electron mobility in one-side modulation-doped single asymmetric quantum
wells, taking into account the presence of residual impurities. The
effects of ionized acceptors were included in the variational
calculation within the depletion approximation. All relevant scattering
rates were taken into account, namely acoustic phonons, ionized
impurities (remote and background), alloy disorder and interface
roughness. The mobility dependencies on the electron gas density and
residual acceptor concentration were found and we show that the
background impurity scattering rate is the main scattering mechanism for
acceptor concentrations above similar to 3 x 10(15) cm(-3), in good
agreement to recent experimental works involving high-quality
GaAs/AlGaAs modulation-doped quantum wells. (C) 2002 Elsevier Science
B.V. All rights reserved.
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