Abstract
We investigated the quantitative description of nanoporous silicon
morphology and its correlation with electrical and optical properties.
We performed first-order as well as second-order statistical analysis of
AFM images of nanoporous silicon fabricated by two different methods:
reaction-induced-vapor-phase-stain-etch and electrochemical. We also
simulated AFM images by generation of various model surfaces. From the
height-height correlation plots, we were able to observe the effects of
the growth method on RMS roughness parameter and verify that
photoluminescence can be observed despite very small changes in silicon
surface morphology. The analysis of the model surfaces showed that it is
possible to reproduce the self-affine character of the porous surfaces
by means of a linear combination of sine surfaces. (c) 2005 Elsevier
Ltd. All fights reserved.
Users
Please
log in to take part in the discussion (add own reviews or comments).