%0 Journal Article %1 Fornari_2020 %A Fornari, Celso I. %A Bentmann, Hendrik %A Morelhão, Sérgio L. %A Peixoto, Thiago R. F. %A Rappl, Paulo H. O. %A Tcakaev, Abdul-Vakhab %A Zabolotnyy, Volodymyr %A Kamp, Martin %A Lee, Tien-Lin %A Min, Chul-Hee %A Kagerer, Philipp %A Vidal, Raphael C. %A Isaeva, Anna %A Ruck, Michael %A Hinkov, Vladimir %A Reinert, Friedrich %A Abramof, Eduardo %D 2020 %I American Chemical Society %J J. Phys. Chem. C %K a d %N 29 %P 16048-16057 %R 10.1021/acs.jpcc.0c05077 %T Incorporation of Europium in Bi$_2$Te$_3$ topological insulator epitaxial films %U https://doi.org/10.1021%2Facs.jpcc.0c05077 %V 124 %X In the field of topological materials, the interaction between band topology and magnetism remains a current frontier for the advancement of new topological states and spintronic functionalities. Doping with rare-earth elements with large magnetic moments is a current approach to exploit the phenomenology of such interaction. However, dopant solubility into the main matrix plays a major role. In this sense, the present work is focused on elucidating how Eu incorporates into Bi2Te3 lattice as a function of doping. This work reports a systematic investigation of the structural and electronic properties of bismuth telluride epitaxial layers doped with Eu. $Bi_2Te_3$ films were grown by molecular beam epitaxy on (111) $BaF_2$ substrates with nominal Eu doping ranging from 0% up to 9%. X-ray diffraction analysis and scanning transmission electron microscopy reveal that Eu atoms enter substitutionally on Bi sites up to 4% of Eu doping. In contrast, the 9% Eu-doped sample contains epitaxially oriented nanoclusters of EuTe. X-ray photoelectron and absorption spectroscopies show that Eu atoms enter the $Bi_2Te_3$ crystal matrix in the divalent Eu2+ state for all Eu concentrations. Angle-resolved photoemission experiments indicate that the topological surface state is preserved in the presence of the local magnetic moments introduced by the Eu impurities.

@article{Fornari_2020, abstract = {In the field of topological materials, the interaction between band topology and magnetism remains a current frontier for the advancement of new topological states and spintronic functionalities. Doping with rare-earth elements with large magnetic moments is a current approach to exploit the phenomenology of such interaction. However, dopant solubility into the main matrix plays a major role. In this sense, the present work is focused on elucidating how Eu incorporates into Bi2Te3 lattice as a function of doping. This work reports a systematic investigation of the structural and electronic properties of bismuth telluride epitaxial layers doped with Eu. $Bi_2Te_3$ films were grown by molecular beam epitaxy on (111) $BaF_2$ substrates with nominal Eu doping ranging from 0% up to 9%. X-ray diffraction analysis and scanning transmission electron microscopy reveal that Eu atoms enter substitutionally on Bi sites up to 4% of Eu doping. In contrast, the 9% Eu-doped sample contains epitaxially oriented nanoclusters of EuTe. X-ray photoelectron and absorption spectroscopies show that Eu atoms enter the $Bi_2Te_3$ crystal matrix in the divalent Eu2+ state for all Eu concentrations. Angle-resolved photoemission experiments indicate that the topological surface state is preserved in the presence of the local magnetic moments introduced by the Eu impurities.}, added-at = {2021-05-27T09:39:38.000+0200}, author = {Fornari, Celso I. and Bentmann, Hendrik and Morelhão, Sérgio L. and Peixoto, Thiago R. F. and Rappl, Paulo H. O. and Tcakaev, Abdul-Vakhab and Zabolotnyy, Volodymyr and Kamp, Martin and Lee, Tien-Lin and Min, Chul-Hee and Kagerer, Philipp and Vidal, Raphael C. and Isaeva, Anna and Ruck, Michael and Hinkov, Vladimir and Reinert, Friedrich and Abramof, Eduardo}, biburl = {https://www.bibsonomy.org/bibtex/2a17490b33bbe0010c024825671e28f3a/ctqmat}, day = 25, description = {Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films | The Journal of Physical Chemistry C}, doi = {10.1021/acs.jpcc.0c05077}, interhash = {f9f64ecc56cf4f7643053012a2ac2249}, intrahash = {a17490b33bbe0010c024825671e28f3a}, journal = {J. Phys. Chem. C}, keywords = {a d}, month = {06}, number = 29, pages = {16048-16057}, publisher = {American Chemical Society}, timestamp = {2023-11-07T09:21:42.000+0100}, title = {Incorporation of Europium in Bi$_{\mathbf{2}}$Te$_{\mathbf{3}}$ topological insulator epitaxial films}, url = {https://doi.org/10.1021%2Facs.jpcc.0c05077}, volume = 124, year = 2020 }