%0 Journal Article %1 WOS:000085040100012 %A Caetano, EWS %A Bezerra, EF %A Freire, VN %A da Costa, JAP %A da Silva, EF %C THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND %D 2000 %I PERGAMON-ELSEVIER SCIENCE LTD %J SOLID STATE COMMUNICATIONS %K electronic transport} {semiconductors; %N 9 %P 539-542 %R 10.1016/S0038-1098(99)00522-0 %T Ultrafast electron drift velocity overshoot in 3C-SiC %V 113 %X A theoretical study on the ultrafast high-field transport transient properties of electrons in 3C-SiC is performed within a parabolic and a nonparabolic band scheme. In both cases, the transient regime before the electron energy and drift velocity attain their steady-state is shown to be shorter than 0.2 ps. When the applied electric field intensity is higher than 300 kV/cm, an overshoot always occurs in the electron drift velocity, which is more pronounced when band nonparabolicity is considered. (C) 2000 Elsevier Science Ltd. All rights reserved.

@article{WOS:000085040100012, abstract = {A theoretical study on the ultrafast high-field transport transient properties of electrons in 3C-SiC is performed within a parabolic and a nonparabolic band scheme. In both cases, the transient regime before the electron energy and drift velocity attain their steady-state is shown to be shorter than 0.2 ps. When the applied electric field intensity is higher than 300 kV/cm, an overshoot always occurs in the electron drift velocity, which is more pronounced when band nonparabolicity is considered. (C) 2000 Elsevier Science Ltd. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND}, author = {Caetano, EWS and Bezerra, EF and Freire, VN and da Costa, JAP and da Silva, EF}, biburl = {https://www.bibsonomy.org/bibtex/267bacccb02215d4d29c098dcf961dc7e/ppgfis_ufc_br}, doi = {10.1016/S0038-1098(99)00522-0}, interhash = {fa5a3276be63ea9f85c0be18c750dae9}, intrahash = {67bacccb02215d4d29c098dcf961dc7e}, issn = {0038-1098}, journal = {SOLID STATE COMMUNICATIONS}, keywords = {electronic transport} {semiconductors;}, number = 9, pages = {539-542}, publisher = {PERGAMON-ELSEVIER SCIENCE LTD}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Ultrafast electron drift velocity overshoot in 3C-SiC}, tppubtype = {article}, volume = 113, year = 2000 }