%0 Journal Article %1 WOS:000182700700096 %A Sousa, JM %A Vilela, RC %A Costa, RN %A Nobre, EF %A Freire, VN %A Albuquerque, EL %C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS %D 2003 %I ELSEVIER SCIENCE BV %J PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES %K Si/3C-SiC graded heterostructures} interfaces; phonons; {interface %N 1-4 %P 270-271 %R 10.1016/S1386-9477(02)00794-4 %T Optical phonons dispersion relation in Si/3C-SiC heterostructures %V 17 %X The dispersion relation for optical phonons in Si/3C-SiC heterostructures is calculated taking into account the existence of interfacial transition regions with thickness similar to 1 nm. A macroscopic theory based on the dielectric continuum model is used, which fulfills electrostatic boundary conditions. It is shown that interface effects can strongly decrease (up to 100 cm(-1)) the frequency splitting of both the interface and confined modes in the low wave vector limit. (C) 2002 Elsevier Science B.V. All rights reserved.

@article{WOS:000182700700096, abstract = {The dispersion relation for optical phonons in Si/3C-SiC heterostructures is calculated taking into account the existence of interfacial transition regions with thickness similar to 1 nm. A macroscopic theory based on the dielectric continuum model is used, which fulfills electrostatic boundary conditions. It is shown that interface effects can strongly decrease (up to 100 cm(-1)) the frequency splitting of both the interface and confined modes in the low wave vector limit. (C) 2002 Elsevier Science B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, author = {Sousa, JM and Vilela, RC and Costa, RN and Nobre, EF and Freire, VN and Albuquerque, EL}, biburl = {https://www.bibsonomy.org/bibtex/2a732c87596213ecd446ed317feee5e9f/ppgfis_ufc_br}, doi = {10.1016/S1386-9477(02)00794-4}, interhash = {ff301f9a34ecad8e6b2e1e26cd50f78b}, intrahash = {a732c87596213ecd446ed317feee5e9f}, issn = {1386-9477}, journal = {PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES}, keywords = {Si/3C-SiC graded heterostructures} interfaces; phonons; {interface}, note = {International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), TOULOUSE, FRANCE, JUL 22-26, 2002}, number = {1-4}, pages = {270-271}, publisher = {ELSEVIER SCIENCE BV}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Optical phonons dispersion relation in Si/3C-SiC heterostructures}, tppubtype = {article}, volume = 17, year = 2003 }