%0 Journal Article %1 ADFM:ADFM201703254 %A Hu, Lin %A Liu, Tiefeng %A Duan, Jiashun %A Ma, Xiaoyi %A Ge, Congwu %A Jiang, Youyu %A Qin, Fei %A Xiong, Sixing %A Jiang, Fangyuan %A Hu, Bin %A Gao, Xike %A Yi, Yuanping %A Zhou, Yinhua %D 2017 %J Advanced Functional Materials %K doping electronTransportLayer organics perovskite %P n/a--n/a %R 10.1002/adfm.201703254 %T An Amidine-Type n-Dopant for Solution-Processed Field-Effect Transistors and Perovskite Solar Cells %U http://dx.doi.org/10.1002/adfm.201703254 %X This study reports an effective amidine-type n-dopant of 1,8-Diazabicyclo5.4.0undec-7-ene (DBU) that can universally dope electron acceptors, including PC61BM, N2200, and ITIC, by mixing the dopant with the acceptors in organic solvents or exposing the acceptor films in the dopant vapor. The doping mechanism is due to its strong electron-donating property that is also confirmed via the chemical reduction of PEDOT:PSS (yielding color change). The DBU doping considerably increases the electrical conductivity and shifts the Fermi levels up of the PC61BM films. When the DBU-doped PC61BM is used as an electron-transporting layer in perovskite solar cells, the n-doping removes the “S-shape” of J–V characteristics, which leads to the fill factor enhancement from 0.54 to 0.76. Furthermore, the DBU doping can effectively lower the threshold voltage and enhance the electron mobility of PC61BM-based n-channel field-effect transistors. These results show that the DBU can be a promising n-dopant for solution-processed electronics.

@article{ADFM:ADFM201703254, abstract = {This study reports an effective amidine-type n-dopant of 1,8-Diazabicyclo[5.4.0]undec-7-ene (DBU) that can universally dope electron acceptors, including PC61BM, N2200, and ITIC, by mixing the dopant with the acceptors in organic solvents or exposing the acceptor films in the dopant vapor. The doping mechanism is due to its strong electron-donating property that is also confirmed via the chemical reduction of PEDOT:PSS (yielding color change). The DBU doping considerably increases the electrical conductivity and shifts the Fermi levels up of the PC61BM films. When the DBU-doped PC61BM is used as an electron-transporting layer in perovskite solar cells, the n-doping removes the “S-shape” of J–V characteristics, which leads to the fill factor enhancement from 0.54 to 0.76. Furthermore, the DBU doping can effectively lower the threshold voltage and enhance the electron mobility of PC61BM-based n-channel field-effect transistors. These results show that the DBU can be a promising n-dopant for solution-processed electronics.}, added-at = {2017-09-13T10:55:20.000+0200}, author = {Hu, Lin and Liu, Tiefeng and Duan, Jiashun and Ma, Xiaoyi and Ge, Congwu and Jiang, Youyu and Qin, Fei and Xiong, Sixing and Jiang, Fangyuan and Hu, Bin and Gao, Xike and Yi, Yuanping and Zhou, Yinhua}, biburl = {https://www.bibsonomy.org/bibtex/2877fa972ef18590e6f937fcaf5a48393/cgoehler}, doi = {10.1002/adfm.201703254}, interhash = {ff9fe3a86fb810dcbb3e2132e70ffa7b}, intrahash = {877fa972ef18590e6f937fcaf5a48393}, issn = {1616-3028}, journal = {Advanced Functional Materials}, keywords = {doping electronTransportLayer organics perovskite}, pages = {n/a--n/a}, timestamp = {2017-09-13T10:55:20.000+0200}, title = {An Amidine-Type n-Dopant for Solution-Processed Field-Effect Transistors and Perovskite Solar Cells}, url = {http://dx.doi.org/10.1002/adfm.201703254}, year = 2017 }