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Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement., , , , и . BCICTS, стр. 48-51. IEEE, (2018)Millimeter-Wave GaN Device Modeling for Power Amplifiers., , , и . DRC, стр. 1-2. IEEE, (2020)Highly integrated RF frontend module for high SHF wide-band massive MIMO in 5G, and switching-mode amplifiers beyond 4G., , , , , , , и . VLSI-DAT, стр. 1-4. IEEE, (2017)A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications., , и . BCICTS, стр. 1-4. IEEE, (2020)Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation., , , и . BCICTS, стр. 1-4. IEEE, (2019)Millimeter-Wave GaN Power Amplifier MMICs for 5G Application., , , и . ISCAS, стр. 1-4. IEEE, (2019)Static sequence assisted out-of-band power suppression for DFT-s-OFDM., , , , , и . PIMRC, стр. 61-66. IEEE, (2015)GaN Amplifiers of Selectable Output Power Function with Semi-Custom Matching Networks., , , , и . IEICE Trans. Electron., 102-C (10): 682-690 (2019)0.4-5.8 GHz SiGe-MMIC Quadrature Modulator Employing Self Current Controlled Mixer for Cognitive Radio., , , , , и . IEICE Trans. Commun., 92-B (12): 3701-3710 (2009)A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network., , , и . BCICTS, стр. 1-4. IEEE, (2019)