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64-GBd DP-Bipolar-8ASK Transmission Over 120 km SSMF Employing a Monolithically Integrated Driver and MZM in 0.25-μm SiGe BiCMOS Technology.

, , , , , , , , , , , , , , , и . OFC, стр. 1-3. IEEE, (2019)

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Ángel López García

Carlos Luis Garcia Lopez

Mauricio Iriarte

José Iria

Rita Iriarte

 

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64-GBd DP-Bipolar-8ASK Transmission Over 120 km SSMF Employing a Monolithically Integrated Driver and MZM in 0.25-μm SiGe BiCMOS Technology., , , , , , , , , и 6 other автор(ы). OFC, стр. 1-3. IEEE, (2019)9.9 V High-Voltage Switch in a standard 180 nm CMOS technology for MEMS Inclinometers., , , , и . PRIME, стр. 301-304. IEEE, (2023)First Demonstration of Fully Integrated Segmented Driver and MZM in 0.25-µm SiGe BiCMOS employing 112 Gb/s PAM4 over 60 km SSMF., , , , , , , , , и 4 other автор(ы). ECOC, стр. 1-3. IEEE, (2018)DAC-free ultra-low-power dual-polarization 64-QAM transmission with InP IQ segmented MZM module., , , , , , , , , и 4 other автор(ы). OFC, стр. 1-3. IEEE, (2016)Impact of SiGe HBT hot-carrier degradation on the broadband amplifier output supply current., , , , , и . ESSDERC, стр. 154-157. IEEE, (2019)Modeling and Design Aspects of a Monolithically Integrated Optoelectronic Chip enabling 64Gbaud Operation., , , , , , , , , и . OFC, стр. 1-3. IEEE, (2018)