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Controllability of multi-level states in memristive device models using a transistor as current compliance during SET operation., , , и . IJCNN, стр. 1-8. IEEE, (2015)The influence of interfacial (sub)oxide layers on the properties of pristine resistive switching devices., , , , , и . NVMTS, стр. 1-4. IEEE, (2018)Memory Devices: Energy-Space-Time Tradeoffs., , , , , , , и . Proc. IEEE, 98 (12): 2185-2200 (2010)NeuroHammer: Inducing Bit-Flips in Memristive Crossbar Memories., , , , , , , , и . DATE, стр. 1181-1184. IEEE, (2022)Integration of Physics-Derived Memristor Models with Machine Learning Frameworks., , , и . IEEECONF, стр. 1142-1146. IEEE, (2022)Memristive Device Modeling and Circuit Design Exploration for Computation-in-Memory., , , и . ISCAS, стр. 1-5. IEEE, (2019)Exploring Multi-Valued Logic and its Application in Emerging Post-CMOS Technologies., , , , , , , , , и . NANOARCH, стр. 30:1-30:7. ACM, (2023)Experimental Verification of Uncoupled Memristive Cellular Nonlinear Network by Processing the EDGE Detection Task., , , , , , , , , и . NANOARCH, стр. 36:1-36:7. ACM, (2023)Performance Analysis of Memristive-CNN based on a VCM Device Model., , , , и . ISCAS, стр. 1184-1188. IEEE, (2022)A Complementary Resistive Switch-Based Crossbar Array Adder., , , и . IEEE J. Emerg. Sel. Topics Circuits Syst., 5 (1): 64-74 (2015)