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A 40-nm, 2M-Cell, 8b-Precision, Hybrid SLC-MLC PCM Computing-in-Memory Macro with 20.5 - 65.0TOPS/W for Tiny-Al Edge Devices., , , , , , , , , и . ISSCC, стр. 1-3. IEEE, (2022)8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices., , , , , , , , , и 4 other автор(ы). IEEE J. Solid State Circuits, 58 (1): 303-315 (2023)Challenges in Circuits of Nonvolatile Compute-In-Memory for Edge AI Chips., , , , , , и . MWSCAS, стр. 98-102. IEEE, (2023)A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W., , , , , , , , , и 6 other автор(ы). ISSCC, стр. 258-259. IEEE, (2023)34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Macro with 31.2TFLOPS/W for AI Edge Devices., , , , , , , , , и 8 other автор(ы). ISSCC, стр. 580-582. IEEE, (2024)A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices., , , , , , , , , и 8 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Reliable Computing of ReRAM Based Compute-in-Memory Circuits for AI Edge Devices., , , и . ICCAD, стр. 158:1-158:6. ACM, (2022)An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices., , , , , , , , , и 4 other автор(ы). ISSCC, стр. 1-3. IEEE, (2022)