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Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics., , , , , , , , и . MIPRO, стр. 45-49. IEEE, (2021)Titanium and Nickel as alternative materials for mid Infrared Plasmonic., , , , и . MIPRO, стр. 36-39. IEEE, (2021)Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensing., , , , , и . MIPRO, стр. 23-26. IEEE, (2018)(Si)GeSn nanostructures for optoelectronic device applications., , , , и . MIPRO, стр. 1-4. IEEE, (2016)Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si., , , , , , и . Microelectron. J., (2022)Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates., , , , , , , , и . MIPRO, стр. 32-35. IEEE, (2018)Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001)., , , , и . MIPRO, стр. 27-31. IEEE, (2018)Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges., , , , , , , , , и 2 other автор(ы). MIPRO, стр. 57-65. IEEE, (2017)Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy., , , , , и . MIPRO, стр. 37-42. IEEE, (2017)