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5.5 A 2.1e- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology.

, , , , , , , , , , , , , , , , , , , , , , , , , , , и . ISSCC, стр. 102-104. IEEE, (2020)

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