From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Automatic in-situ measurement of thermal resistance for GaN HEMTs., , , , , , , и . Microelectron. J., (2024)Software-Defined Satellite Observation: A Fast Method Based on Virtual Resource Pools., , , , , и . Remote. Sens., 15 (22): 5388 (ноября 2023)Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection., , , , , , и . IEEE Trans. Instrum. Meas., (2023)Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs., , , , и . Microelectron. Reliab., 53 (5): 694-700 (2013)New Anthracene-Fused Nonfullerene Acceptors for High-Efficiency Organic Solar Cells: Energy Level Modulations Enabling Match of Donor and Acceptor, , , , , , , , , и . Advanced Energy Materials, 9 (12): 1803541 (февраля 2019)A Halogenation Strategy for over 12% Efficiency Nonfullerene Organic Solar Cells, , , , , , , , , и . Advanced Energy Materials, (мая 2018)A Networked Control Scheme of Residential Microgrid for China Remote Areas., , , , и . CCIS, стр. 1028-1032. IEEE, (2018)Achieving Both Enhanced Voltage and Current through Fine-Tuning Molecular Backbone and Morphology Control in Organic Solar Cells, , , , , , , , , и 6 other автор(ы). Advanced Energy Materials, (июня 2019)Research on pavement crack recognition methods based on image processing., и . ICDIP, том 8009 из SPIE Proceedings, стр. 800930. SPIE, (2011)GaN Schottky Diode Model for THz Multiplier Design with Consideration of Self-heating Effect., , , , , , , , , и 1 other автор(ы). ASICON, стр. 1-3. IEEE, (2019)