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Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability., , , , , , , , , и . IRPS, стр. 1-6. IEEE, (2023)Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories., , , , , , , , , и 4 other автор(ы). IEEE Trans. Circuits Syst. I Regul. Pap., 61-I (2): 443-454 (2014)Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1 S1R crossbar arrays., , , , , , , , , и 3 other автор(ы). IMW, стр. 1-4. IEEE, (2021)Synchronous full-adder based on complementary resistive switching memory cells., , , , , , , , , и 3 other автор(ы). NEWCAS, стр. 1-4. IEEE, (2013)Non-Volatile Flip-Flop Based on Unipolar ReRAM for Power-Down Applications., , , и . J. Low Power Electron., 8 (1): 1-10 (2012)1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation., , , , , , , , , и 6 other автор(ы). MIXDES, стр. 1-6. IEEE, (2023)Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells., , , , , , , , , и 4 other автор(ы). J. Parallel Distributed Comput., 74 (6): 2484-2496 (2014)Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization., , , , , , , , , и 4 other автор(ы). IRPS, стр. 1-6. IEEE, (2021)Energy-efficient Computation-In-Memory Architecture using Emerging Technologies., , , , , , , , , и 2 other автор(ы). ICM, стр. 325-334. IEEE, (2023)1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing., , , , , , , , , и 10 other автор(ы). IMW, стр. 1-4. IEEE, (2022)