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Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application.

, , , , , , , , , , , , , , , , , , , и . VLSIC, стр. 14-. IEEE, (2015)

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Kazuhiko Yoshida

Kazuhiko Yoshida

Kazuhiko Sano

Kazuhiko Uzawa

Kazuhiko Yoshida

 

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Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application., , , , , , , , , и 10 other автор(ы). VLSIC, стр. 14-. IEEE, (2015)Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM., , , , , , , , , и 9 other автор(ы). ISSCC, стр. 220-221. IEEE, (2013)An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput., , , , , , , , , и 3 other автор(ы). IEEE J. Solid State Circuits, 48 (1): 178-185 (2013)An 8Mb multi-layered cross-point ReRAM macro with 443MB/s write throughput., , , , , , , , , и 10 other автор(ы). ISSCC, стр. 432-434. IEEE, (2012)A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning., , , , , , , , , и 7 other автор(ы). IEEE J. Solid State Circuits, 40 (11): 2296-2304 (2005)Highly-reliable TaOx reram technology using automatic forming circuit., , , , , , , и . ICICDT, стр. 1-4. IEEE, (2014)