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Characterization and Multiscale Modeling of TDDB in State-of-the-art BEOL., , , , , , , , , и 15 other автор(ы). IRPS, стр. 10. IEEE, (2024)Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents., , , , , , , и . IMW, стр. 1-4. IEEE, (2022)Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development., , , , , , , , , и 6 other автор(ы). IMW, стр. 1-4. IEEE, (2024)Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation., , , , , и . IRPS, стр. 4. IEEE, (2022)Gate stack engineering for emerging polarization based non-volatile memories.. Dresden University of Technology, Germany, (2017)Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories., , , , , , , и . ESSDERC, стр. 160-163. IEEE, (2017)The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging., , , и . IRPS, стр. 1-6. IEEE, (2023)Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers., , , , , , , и . IRPS, стр. 1-8. IEEE, (2019)Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications., , , , , , , , и . ESSDERC, стр. 369-372. IEEE, (2016)Impact of field cycling on HfO2 based non-volatile memory devices., , , , , , , , , и 10 other автор(ы). ESSDERC, стр. 364-368. IEEE, (2016)