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First integration of Cu TSV using die-to-wafer direct bonding and planarization., , , , , , , , , и 3 other автор(ы). 3DIC, стр. 1-5. IEEE, (2009)An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling., , , , , , , , , и 5 other автор(ы). 3DIC, стр. 1-4. IEEE, (2009)Toward Eco-Design of a 5G mmWave Transmitarray Antenna Based on Life Cycle Assessment., , , , , и . EuCNC, стр. 440-445. IEEE, (2022)200°C direct bonding copper interconnects : Electrical results and reliability., , , , , и . 3DIC, стр. 1-4. IEEE, (2011)Advances toward reliable high density Cu-Cu interconnects by Cu-SiO2 direct hybrid bonding., , , , , , , , , и . 3DIC, стр. 1-8. IEEE, (2014)Novel low temperature 3D wafer stacking technology for high density device integration., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 151-154. IEEE, (2013)Chip to wafer copper direct bonding electrical characterization and thermal cycling., , , , , , , , и . 3DIC, стр. 1-7. IEEE, (2013)Recent Developments of Cu-Cu non-thermo compression bonding for wafer-to-wafer 3D stacking., , , , , , , , , и 3 other автор(ы). 3DIC, стр. 1-6. IEEE, (2010)Impact of containment and deposition method on sub-micron chip-to-wafer self-assembly yield., , , , , и . 3DIC, стр. 1-5. IEEE, (2011)Smart Stacking™ and Smart Cut™ technologies for wafer level 3D integration., , , и . ICICDT, стр. 231-234. IEEE, (2013)