From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO2 and S3N4 as Trapping Layer., , , , , , , и . IEICE Trans. Electron., 95-C (5): 831-836 (2012)Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor., , , , , , , и . VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Chopper-Stabilized Low-Noise Multipath Operational Amplifier With Dual Ripple Rejection Loops., , , , , , , , и . IEEE Trans. Circuits Syst., 67-II (11): 2427-2431 (2020)Bottom-Gated ZnO TFT Pressure Sensor with 1D Nanorods., , , , , , и . Sensors, 22 (22): 8907 (2022)SONOS-Type Flash Memory with HfO2 Thinner than 4 nm as Trapping Layer Using Atomic Layer Deposition., , , , , , , , , и . IEICE Trans. Electron., 93-C (5): 590-595 (2010)Thermally Robust Nickel Silicide Process for Nano-Scale CMOS Technology., , , , , , , , , и . IEICE Trans. Electron., 88-C (4): 651-655 (2005)Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs., , , , , , , , , и . IEICE Trans. Electron., 96-C (5): 624-629 (2013)Investigation of Random Telegraph Noise Characteristics with Intentional Hot Carrier Aging., , , , , и . IRPS, стр. 1-4. IEEE, (2020)Reliability Analysis by Charge Migration of 3D SONOS Flash Memory., , , , и . IRPS, стр. 1-5. IEEE, (2020)Low-Noise Chopper Amplifier Using Lateral PNP Input Stage With Automatic Base Current Cancellation., , , , , , , , и . IEEE Trans. Circuits Syst. II Express Briefs, 68 (7): 2297-2301 (2021)