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Cycling-induced threshold-voltage instabilities in nanoscale NAND flash memories: Sensitivity to the array background pattern.

, , , , , , и . ESSDERC, стр. 54-57. IEEE, (2014)

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Angelo Jotzoff

Angelo Jotzoff

Angelo Geissen

Angelo Schmandra

Angelo Brayner

 

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Reviewing the Evolution of the NAND Flash Technology., , , , , и . Proc. IEEE, 105 (9): 1609-1633 (2017)Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O2-Based Ferroelectric NVDRAM., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-8. IEEE, (2024)Erratic Effects of Irradiation in Floating Gate Memory Cells., , , и . IOLTS, стр. 51-56. IEEE Computer Society, (2006)Soft Errors induced by single heavy ions in Floating Gate memory arrays., , , и . DFT, стр. 275-284. IEEE Computer Society, (2005)Introduction to flash memory., , , и . Proc. IEEE, 91 (4): 489-502 (2003)Accelerated reliability testing of flash memory: Accuracy and issues on a 45nm NOR technology., , , , , , , , , и . ICICDT, стр. 37-40. IEEE, (2013)Cycling-induced threshold-voltage instabilities in nanoscale NAND flash memories: Sensitivity to the array background pattern., , , , , , и . ESSDERC, стр. 54-57. IEEE, (2014)Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions., , , , , , и . IOLTS, стр. 146-151. IEEE Computer Society, (2007)