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A 1.2V receiver front-end for multi-standard wireless applications in 65 nm CMOS LP., , , , , и . ESSCIRC, стр. 414-417. IEEE, (2008)A millimeter-wave power amplifier with 25dB power gain and +8dBm saturated output power., , , и . ESSCIRC, стр. 276-279. IEEE, (2007)Inductor-less, 10Gb/s limiter with 10mV sensitivity and offset/temperature compensation in baseline CMOS18., и . ESSCIRC, стр. 153-156. IEEE, (2003)A 10Gb/s, 3.3V, laser/modulator driver with high power efficiency., и . ESSCIRC, стр. 427-430. IEEE, (2005)A 4GS/s, 8.45 ENOB and 5.7fJ/conversion, digital assisted, sampling system in 45nm CMOS SOI., , и . CICC, стр. 1-4. IEEE, (2011)Indirect performance sensing for on-chip analog self-healing via Bayesian model fusion., , , , , , , , , и 4 other автор(ы). CICC, стр. 1-4. IEEE, (2013)A 3.2GS/s 4.55b ENOB two-step subranging ADC in 45nm SOI CMOS., , , , , , , , и . CICC, стр. 1-4. IEEE, (2012)A 60GHz, linear, direct down-conversion mixer with mm-Wave tunability in 32nm CMOS SOI., , , , , , , , и . CICC, стр. 1-4. IEEE, (2013)A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power., , и . IEEE J. Solid State Circuits, 43 (7): 1553-1562 (2008)Receiver Front-End Circuits for Future Generations of Wireless Communications., , , , и . ISCAS, стр. 745-748. IEEE, (2007)