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Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches., , , , , и . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 22 (3): 285-292 (2003)Three-dimensional simulation of HPCVD-linking continuum transport and reaction kinetics with topography simulation., , , и . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 18 (12): 1741-1749 (1999)High-precision interconnect analysis., , , и . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 17 (11): 1148-1159 (1998)