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The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation.

, , , , , и . IRPS, стр. 1-7. IEEE, (2020)

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Michiel Morshuis

Michiel Kwantes

Michiel Vos

Michiel Schokking

Michiel Huizinga

 

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Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs., , , , , , , , , и . IRPS, стр. 6. IEEE, (2022)Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper., , , , , , , , и . IRPS, стр. 1-10. IEEE, (2023)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 262-265. IEEE, (2019)Reliability challenges in Forksheet Devices: (Invited Paper)., , , , , , , , , и 2 other автор(ы). IRPS, стр. 1-8. IEEE, (2023)Physics-based device aging modelling framework for accurate circuit reliability assessment., , , , , , , , , и . IRPS, стр. 1-6. IEEE, (2021)Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors., , , , , , , , , и 2 other автор(ы). IRPS, стр. 6. IEEE, (2022)The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation., , , , , и . IRPS, стр. 1-7. IEEE, (2020)A Compact Physics Analytical Model for Hot-Carrier Degradation., , , , , , , , и . IRPS, стр. 1-7. IEEE, (2020)The properties, effect and extraction of localized defect profiles from degraded FET characteristics., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-7. IEEE, (2021)A BSIM-Based Predictive Hot-Carrier Aging Compact Model., , , , , , , , , и . IRPS, стр. 1-9. IEEE, (2021)