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A 113mm2 32Gb 3b/cell NAND flash memory.

, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , и . ISSCC, стр. 242-243. IEEE, (2009)

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A 113mm2 32Gb 3b/cell NAND flash memory., , , , , , , , , и 28 other автор(ы). ISSCC, стр. 242-243. IEEE, (2009)A 19 nm 112.8 mm2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface., , , , , , , , , и 22 other автор(ы). IEEE J. Solid State Circuits, 48 (1): 159-167 (2013)A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface., , , , , , , , , и 45 other автор(ы). ISSCC, стр. 422-424. IEEE, (2012)A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology., , , , , , , , , и 54 other автор(ы). ISSCC, стр. 336-338. IEEE, (2018)A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm2 bit density with 3.2Gbps interface and 205MB/s program throughput., , , , , , , , , и 10 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)13.5 A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with tPROG=75µs and tR=4µs., , , , , , , , , и 13 other автор(ы). ISSCC, стр. 226-228. IEEE, (2020)A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology., , , , , , , , , и 32 other автор(ы). ISSCC, стр. 198-199. IEEE, (2011)