From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

A Current-Mirror-Based GaAs-HBT RF Power Detector Suitable for Base Terminal Monitoring in an HBT Power Stage., , , , и . IEICE Trans. Electron., 98-C (12): 1150-1160 (2015)Design and Measurements of Two-Gain-Mode GaAs-BiFET MMIC Power Amplifier Modules with Small Phase Discontinuity for WCDMA Data Communications., , , , , и . IEICE Trans. Electron., 101-C (1): 65-77 (2018)0.8-/1.5-GHz-Band WCDMA HBT MMIC Power Amplifiers with an Analog Bias Control Scheme., , , , , и . IEICE Trans. Electron., 98-C (9): 934-945 (2015)Design and Measurements of Building Blocks Supporting a 1.9-GHz-Band BiFET MMIC Power Amplifier for WCDMA Handsets., , , , , , и . IEICE Trans. Electron., 99-C (7): 837-848 (2016)A 2.2-V operation, 2.4-GHz single-chip GaAs MMIC transceiver for wireless applications., , , , , , и . IEEE J. Solid State Circuits, 34 (4): 502-512 (1999)A Ku-band 70-W Class GaN Internally Matched High Power Amplifier with Wide Offset Frequencies of up to 400 MHz for Multi-Carrier Satellite Communications., , , , , , , и . BCICTS, стр. 1-4. IEEE, (2020)Experimental Study on CDMA GaAs HBT MMIC Power Amplifier Layout Design for Reducing Turn-On Delay in Transient Response., , , , , , , и . IEICE Trans. Electron., 100-C (6): 618-631 (2017)A 3.5-GHz-Band GaAs HBT Stage-Bypass-Type Step-Gain Amplifier Using Base-Collector Diode Switches and Its Application to a WiMAX HBT MMIC Power Amplifier Module., , , , , и . IEICE Trans. Electron., 98-C (7): 716-728 (2015)3.5-GHz-Band Low-Bias-Current Operation 0/20-dB Step Linearized Attenuators Using GaAs-HBT Compatible, AC-Coupled, Stack Type Base-Collector Diode Switch Topology., , , , и . IEICE Trans. Electron., 90-C (7): 1515-1523 (2007)Ku-Band 70-/30-W-Class Internally Matched GaN Power Amplifiers With Low IMD3 Over a Wide Offset Frequency Range of Up To 400 MHz., , , , , , , , и . IEEE J. Solid State Circuits, 56 (9): 2635-2646 (2021)