%0 Journal Article %1 journals/mr/BravaixGDHPPRV05 %A Bravaix, Alain %A Goguenheim, Didier %A Denais, M. %A Huard, Vincent %A Parthasarathy, C. R. %A Perrier, F. %A Revil, Nathalie %A Vincent, E. %D 2005 %J Microelectron. Reliab. %K dblp %N 9-11 %P 1370-1375 %T Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. %U http://dblp.uni-trier.de/db/journals/mr/mr45.html#BravaixGDHPPRV05 %V 45

@article{journals/mr/BravaixGDHPPRV05, added-at = {2023-09-30T00:00:00.000+0200}, author = {Bravaix, Alain and Goguenheim, Didier and Denais, M. and Huard, Vincent and Parthasarathy, C. R. and Perrier, F. and Revil, Nathalie and Vincent, E.}, biburl = {https://www.bibsonomy.org/bibtex/29ea61774c9760ccab789e57ab2dfb865/dblp}, ee = {https://doi.org/10.1016/j.microrel.2005.07.023}, interhash = {05909f69863882cbb657c5346338b9d7}, intrahash = {9ea61774c9760ccab789e57ab2dfb865}, journal = {Microelectron. Reliab.}, keywords = {dblp}, number = {9-11}, pages = {1370-1375}, timestamp = {2024-04-09T02:48:30.000+0200}, title = {Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr45.html#BravaixGDHPPRV05}, volume = 45, year = 2005 }