%0 Journal Article %1 journals/chinaf/HeCSJDLSL16 %A He, Liang %A Chen, Hua %A Sun, Peng %A Jia, Xiaofei %A Dai, Chongguang %A Liu, Jing %A Shao, Long %A Liu, Zhaoqing %D 2016 %J Sci. China Inf. Sci. %K %N 4 %P 042402:1-042402:11 %T Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices. %U http://dblp.uni-trier.de/db/journals/chinaf/chinaf59.html#HeCSJDLSL16 %V 59

@article{journals/chinaf/HeCSJDLSL16, added-at = {2023-12-12T18:01:52.000+0100}, author = {He, Liang and Chen, Hua and Sun, Peng and Jia, Xiaofei and Dai, Chongguang and Liu, Jing and Shao, Long and Liu, Zhaoqing}, biburl = {https://www.bibsonomy.org/bibtex/253fbfde961ac5978bfdef448f0cc3447/admin}, ee = {https://doi.org/10.1007/s11432-015-5362-2}, interhash = {0c63d47335924b2499fc60c41306c3fe}, intrahash = {53fbfde961ac5978bfdef448f0cc3447}, journal = {Sci. China Inf. Sci.}, keywords = {}, number = 4, pages = {042402:1-042402:11}, timestamp = {2023-12-12T18:01:52.000+0100}, title = {Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices.}, url = {http://dblp.uni-trier.de/db/journals/chinaf/chinaf59.html#HeCSJDLSL16}, volume = 59, year = 2016 }