%0 Conference Paper %1 conf/isqed/SalahuddinJK13 %A Salahuddin, Shairfe Muhammad %A Jiao, Hailong %A Kursun, Volkan %B ISQED %D 2013 %I IEEE %K dblp %P 353-358 %T A novel 6T SRAM cell with asymmetrically gate underlap engineered FinFETs for enhanced read data stability and write ability. %U http://dblp.uni-trier.de/db/conf/isqed/isqed2013.html#SalahuddinJK13 %@ 978-1-4673-4951-2

@inproceedings{conf/isqed/SalahuddinJK13, added-at = {2013-08-25T00:00:00.000+0200}, author = {Salahuddin, Shairfe Muhammad and Jiao, Hailong and Kursun, Volkan}, biburl = {https://www.bibsonomy.org/bibtex/2e95046be13f032e240a2117d5c48d2e1/dblp}, booktitle = {ISQED}, crossref = {conf/isqed/2013}, ee = {http://dx.doi.org/10.1109/ISQED.2013.6523634}, interhash = {170c95919df2ba4d0f05fd2ea92cb40f}, intrahash = {e95046be13f032e240a2117d5c48d2e1}, isbn = {978-1-4673-4951-2}, keywords = {dblp}, pages = {353-358}, publisher = {IEEE}, timestamp = {2013-08-27T11:42:05.000+0200}, title = {A novel 6T SRAM cell with asymmetrically gate underlap engineered FinFETs for enhanced read data stability and write ability.}, url = {http://dblp.uni-trier.de/db/conf/isqed/isqed2013.html#SalahuddinJK13}, year = 2013 }