%0 Journal Article %1 WOS:000260574400084 %A Chaves, Andrey %A Freire, J A K %A Farias, G A %C ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA %D 2008 %I AMER PHYSICAL SOC %J PHYSICAL REVIEW B %K imported %N 15 %R 10.1103/PhysRevB.78.155306 %T Grading effects in semiconductor nanowires with longitudinal heterostructures %V 78 %X The role of graded interfaces between materials in a cylindrical free-standing quantum wire with longitudinal heterostructures is theoretically investigated by solving the Schrodinger equation within the effective-mass approximation. Previous works on such wires with abrupt interfaces have predicted that, as the wire radius is reduced, the effective potential along the growth direction is altered and might lead to a carrier confinement at the barriers, as in a type-II system. Our results show that when graded interfaces are considered, such potential acquires a peculiar form, which presents cusps at the interfacial regions yielding to electron confinement at interfaces. Numerical results also show that, in some special cases, interfacial confinement and type-I to type-II transitions can also be induced by applying a magnetic field parallel to the wire axis.

@article{WOS:000260574400084, abstract = {The role of graded interfaces between materials in a cylindrical free-standing quantum wire with longitudinal heterostructures is theoretically investigated by solving the Schrodinger equation within the effective-mass approximation. Previous works on such wires with abrupt interfaces have predicted that, as the wire radius is reduced, the effective potential along the growth direction is altered and might lead to a carrier confinement at the barriers, as in a type-II system. Our results show that when graded interfaces are considered, such potential acquires a peculiar form, which presents cusps at the interfacial regions yielding to electron confinement at interfaces. Numerical results also show that, in some special cases, interfacial confinement and type-I to type-II transitions can also be induced by applying a magnetic field parallel to the wire axis.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA}, author = {Chaves, Andrey and Freire, J A K and Farias, G A}, biburl = {https://www.bibsonomy.org/bibtex/22e542a956ce88de7a607aadbb123179a/ppgfis_ufc_br}, doi = {10.1103/PhysRevB.78.155306}, interhash = {29c5b7dfb99ca81fbc72efe768690e2d}, intrahash = {2e542a956ce88de7a607aadbb123179a}, issn = {2469-9950}, journal = {PHYSICAL REVIEW B}, keywords = {imported}, number = 15, publisher = {AMER PHYSICAL SOC}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Grading effects in semiconductor nanowires with longitudinal heterostructures}, tppubtype = {article}, volume = 78, year = 2008 }