Abstract
The dynamics of hot minority carriers in p-GaAs is calculated for doping
concentrations in the range of 1.5 X 10(17) cm-3 to 1. 5 X 10(18)
cm-3. It is shown that the electron-hole interaction increases the rate
of dissipation of the excess energy of the minority carriers in the
early stages of the process. However, this channel for energy
dissipation becomes weaker as the cooling of the minority carriers
proceeds, an effect more noticeable in the case of high doping levels.
When the electron-hole interaction is disregarded, the dissipation rate
is always smaller for low doping concentrations.
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