15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications.
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%0 Conference Paper
%1 conf/isscc/ChangCCCWLFLLWY20
%A Chang, Jonathan
%A Chen, Yen-Huei
%A Chan, Gary
%A Cheng, Hank
%A Wang, Po-Sheng
%A Lin, Yangsyu
%A Fujiwara, Hidehiro
%A Lee, Robin
%A Liao, Hung-Jen
%A Wang, Ping-Wei
%A Yeap, Geoffrey
%A Li, Quincy
%B ISSCC
%D 2020
%I IEEE
%K dblp
%P 238-240
%T 15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications.
%U http://dblp.uni-trier.de/db/conf/isscc/isscc2020.html#ChangCCCWLFLLWY20
%@ 978-1-7281-3205-1
@inproceedings{conf/isscc/ChangCCCWLFLLWY20,
added-at = {2020-04-18T00:00:00.000+0200},
author = {Chang, Jonathan and Chen, Yen-Huei and Chan, Gary and Cheng, Hank and Wang, Po-Sheng and Lin, Yangsyu and Fujiwara, Hidehiro and Lee, Robin and Liao, Hung-Jen and Wang, Ping-Wei and Yeap, Geoffrey and Li, Quincy},
biburl = {https://www.bibsonomy.org/bibtex/2d58d1d2b0d9687e5005a5f82884de652/dblp},
booktitle = {ISSCC},
crossref = {conf/isscc/2020},
ee = {https://doi.org/10.1109/ISSCC19947.2020.9062967},
interhash = {2e48ea0fc41251a58e0830bc19eb9a1f},
intrahash = {d58d1d2b0d9687e5005a5f82884de652},
isbn = {978-1-7281-3205-1},
keywords = {dblp},
pages = {238-240},
publisher = {IEEE},
timestamp = {2020-04-21T11:41:16.000+0200},
title = {15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications.},
url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2020.html#ChangCCCWLFLLWY20},
year = 2020
}
