%0 Journal Article %1 journals/ieiceee/NishimuraSYHH05 %A Nishimura, Kazumi %A Shigekawa, Naoteru %A Yokoyama, Haruki %A Hiroki, Masanobu %A Hohkawa, Kohji %D 2005 %J IEICE Electron. Express %K dblp %N 19 %P 501-505 %T SAW characteristics of GaN layers with surfaces exposed by dry etching. %U http://dblp.uni-trier.de/db/journals/ieiceee/ieiceee2.html#NishimuraSYHH05 %V 2

@article{journals/ieiceee/NishimuraSYHH05, added-at = {2021-02-12T00:00:00.000+0100}, author = {Nishimura, Kazumi and Shigekawa, Naoteru and Yokoyama, Haruki and Hiroki, Masanobu and Hohkawa, Kohji}, biburl = {https://www.bibsonomy.org/bibtex/2bb0e80e48f30d10eab96a8a0883a655a/dblp}, ee = {https://doi.org/10.1587/elex.2.501}, interhash = {307f994fb178858088a75f6e83477a4b}, intrahash = {bb0e80e48f30d10eab96a8a0883a655a}, journal = {IEICE Electron. Express}, keywords = {dblp}, number = 19, pages = {501-505}, timestamp = {2024-04-09T06:46:41.000+0200}, title = {SAW characteristics of GaN layers with surfaces exposed by dry etching.}, url = {http://dblp.uni-trier.de/db/journals/ieiceee/ieiceee2.html#NishimuraSYHH05}, volume = 2, year = 2005 }