%0 Journal Article %1 journals/ieicet/ChoJS16 %A Cho, Karam %A Jo, Jaesung %A Shin, Changhwan %D 2016 %J IEICE Trans. Electron. %K dblp %N 5 %P 544-546 %T Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance. %U http://dblp.uni-trier.de/db/journals/ieicet/ieicet99c.html#ChoJS16 %V 99-C

@article{journals/ieicet/ChoJS16, added-at = {2021-10-14T00:00:00.000+0200}, author = {Cho, Karam and Jo, Jaesung and Shin, Changhwan}, biburl = {https://www.bibsonomy.org/bibtex/2c618918f1744ac1a220d135d3c304ad5/dblp}, ee = {http://search.ieice.org/bin/summary.php?id=e99-c_5_544}, interhash = {319dae9ddd8ea48d795d9fa6b544afb3}, intrahash = {c618918f1744ac1a220d135d3c304ad5}, journal = {IEICE Trans. Electron.}, keywords = {dblp}, number = 5, pages = {544-546}, timestamp = {2024-04-08T15:50:17.000+0200}, title = {Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance.}, url = {http://dblp.uni-trier.de/db/journals/ieicet/ieicet99c.html#ChoJS16}, volume = {99-C}, year = 2016 }