%0 Journal Article %1 journals/mr/SaitoN16 %A Saito, Wataru %A Naka, Toshiyuki %D 2016 %J Microelectron. Reliab. %K dblp %P 552-555 %T UIS test of high-voltage GaN-HEMTs with p-type gate structure. %U http://dblp.uni-trier.de/db/journals/mr/mr64.html#SaitoN16 %V 64

@article{journals/mr/SaitoN16, added-at = {2020-02-22T00:00:00.000+0100}, author = {Saito, Wataru and Naka, Toshiyuki}, biburl = {https://www.bibsonomy.org/bibtex/26e7459ed3e5a40345d16d1cad4687c2f/dblp}, ee = {https://doi.org/10.1016/j.microrel.2016.07.066}, interhash = {53b0263b299fc5c78281934b4c11f9d8}, intrahash = {6e7459ed3e5a40345d16d1cad4687c2f}, journal = {Microelectron. Reliab.}, keywords = {dblp}, pages = {552-555}, timestamp = {2020-02-25T13:28:02.000+0100}, title = {UIS test of high-voltage GaN-HEMTs with p-type gate structure.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr64.html#SaitoN16}, volume = 64, year = 2016 }