%0 Journal Article %1 WOS:A1997YE50700020 %A Hayashi, MA %A Morelhao, SL %A Avanci, LH %A Cardoso, LP %A Sasaki, JM %A Kretly, LC %A Chang, SL %C CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD, WOODBURY, NY 11797-2999 %D 1997 %I AMER INST PHYSICS %J APPLIED PHYSICS LETTERS %K imported %N 18 %P 2614-2616 %R 10.1063/1.120157 %T Sensitivity of Bragg surface diffraction to analyze ion-implanted semiconductors %V 71 %X A special case of the x-ray multiple diffraction phenomenon, the Bra,og surface diffraction (BSD), has been investigated under lattice damage due to ion implantation in GaAs (001) samples. The BSD profile is very sensitive to the diffraction regime (dynamical or kinematical) and provides information regarding crystalline perfection and lattice strains in both directions-parallel and perpendicular-to the sample surface. Results from grazing-incidence x-ray diffraction and are also reported. (C) 1997 American Institute of Physics.

@article{WOS:A1997YE50700020, abstract = {A special case of the x-ray multiple diffraction phenomenon, the Bra,og surface diffraction (BSD), has been investigated under lattice damage due to ion implantation in GaAs (001) samples. The BSD profile is very sensitive to the diffraction regime (dynamical or kinematical) and provides information regarding crystalline perfection and lattice strains in both directions-parallel and perpendicular-to the sample surface. Results from grazing-incidence x-ray diffraction and are also reported. (C) 1997 American Institute of Physics.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD, WOODBURY, NY 11797-2999}, author = {Hayashi, MA and Morelhao, SL and Avanci, LH and Cardoso, LP and Sasaki, JM and Kretly, LC and Chang, SL}, biburl = {https://www.bibsonomy.org/bibtex/20818a18606f074d2e31c629cf930472a/ppgfis_ufc_br}, doi = {10.1063/1.120157}, interhash = {6592f02fda022abb71a39e9f064b7990}, intrahash = {0818a18606f074d2e31c629cf930472a}, issn = {0003-6951}, journal = {APPLIED PHYSICS LETTERS}, keywords = {imported}, number = 18, pages = {2614-2616}, publisher = {AMER INST PHYSICS}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Sensitivity of Bragg surface diffraction to analyze ion-implanted semiconductors}, tppubtype = {article}, volume = 71, year = 1997 }