Inproceedings,
7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate.
J. Im, W. Jeong, D. Kim, S. Nam, D. Shim, M. Choi, H. Yoon, D. Kim, Y. Kim, H. Park, D. Kwak, S. Park, S. Yoon, W. Hahn, J. Ryu, S. Shim, K. Kang, S. Choi, J. Ihm, Y. Min, I. Kim, D. Lee, J. Cho, O. Kwon, J. Lee, M. Kim, S. Joo, J. hoon Jang, S. Hwang, D. Byeon, H. Yang, K. Park, K. Kyung, and J. Choi.ISSCC, page 1-3. IEEE, (2015)
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- conf/isscc/ImJKNSCYKKPKPYH15
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- inproceedings
- booktitle
- ISSCC
- year
- 2015
- pages
- 1-3
- publisher
- IEEE
- crossref
- conf/isscc/2015
- ee
- http://dx.doi.org/10.1109/ISSCC.2015.7062960
- isbn
- 978-1-4799-6224-2
- url
- http://dblp.uni-trier.de/db/conf/isscc/isscc2015.html#ImJKNSCYKKPKPYH15
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%1 conf/isscc/ImJKNSCYKKPKPYH15
%A Im, Jae-Woo
%A Jeong, Woopyo
%A Kim, Doo-Hyun
%A Nam, Sangwan
%A Shim, Dong-Kyo
%A Choi, Myung-Hoon
%A Yoon, Hyun-Jun
%A Kim, Dae-Han
%A Kim, Youse
%A Park, Hyun Wook
%A Kwak, Dong-Hun
%A Park, Sang-Won
%A Yoon, Seok-Min
%A Hahn, Wook-Ghee
%A Ryu, Jinho
%A Shim, Sang-Won
%A Kang, Kyung-Tae
%A Choi, Sung-Ho
%A Ihm, Jeong-Don
%A Min, Young-Sun
%A Kim, In-Mo
%A Lee, Doosub
%A Cho, Ji-Ho
%A Kwon, Ohsuk
%A Lee, Ji-Sang
%A Kim, Moosung
%A Joo, Sang-Hyun
%A hoon Jang, Jae
%A Hwang, Sang-Won
%A Byeon, Dae-Seok
%A Yang, Hyang-Ja
%A Park, Ki-Tae
%A Kyung, Kyehyun
%A Choi, Jeong-Hyuk
%B ISSCC
%D 2015
%I IEEE
%K dblp
%P 1-3
%T 7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate.
%U http://dblp.uni-trier.de/db/conf/isscc/isscc2015.html#ImJKNSCYKKPKPYH15
%@ 978-1-4799-6224-2
@inproceedings{conf/isscc/ImJKNSCYKKPKPYH15,
added-at = {2015-03-25T00:00:00.000+0100},
author = {Im, Jae-Woo and Jeong, Woopyo and Kim, Doo-Hyun and Nam, Sangwan and Shim, Dong-Kyo and Choi, Myung-Hoon and Yoon, Hyun-Jun and Kim, Dae-Han and Kim, Youse and Park, Hyun Wook and Kwak, Dong-Hun and Park, Sang-Won and Yoon, Seok-Min and Hahn, Wook-Ghee and Ryu, Jinho and Shim, Sang-Won and Kang, Kyung-Tae and Choi, Sung-Ho and Ihm, Jeong-Don and Min, Young-Sun and Kim, In-Mo and Lee, Doosub and Cho, Ji-Ho and Kwon, Ohsuk and Lee, Ji-Sang and Kim, Moosung and Joo, Sang-Hyun and hoon Jang, Jae and Hwang, Sang-Won and Byeon, Dae-Seok and Yang, Hyang-Ja and Park, Ki-Tae and Kyung, Kyehyun and Choi, Jeong-Hyuk},
biburl = {https://www.bibsonomy.org/bibtex/239b9e37511708162540c32fc93300392/dblp},
booktitle = {ISSCC},
crossref = {conf/isscc/2015},
ee = {http://dx.doi.org/10.1109/ISSCC.2015.7062960},
interhash = {6edb4942df6f5a8975021a6c37b6e1d9},
intrahash = {39b9e37511708162540c32fc93300392},
isbn = {978-1-4799-6224-2},
keywords = {dblp},
pages = {1-3},
publisher = {IEEE},
timestamp = {2015-06-18T16:09:38.000+0200},
title = {7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate.},
url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2015.html#ImJKNSCYKKPKPYH15},
year = 2015
}