%0 Journal Article %1 Itzler2007 %A Itzler, M. A. %A Ben-Michael, R. %A Hsu, C. F. %A Slomkowski, K. %A Tosi, A. %A Cova, S. %A Zappa, F. %A Ispasoiu, R. %C 4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND %D 2007 %I TAYLOR & FRANCIS LTD %J JOURNAL OF MODERN OPTICS %K imported %N 2-3 %P 283-304 %R 10.1080/09500340600792291 %T Single photon avalanche diodes (SPADs) for 1.5 mu m photon counting applications %V 54 %X The paper reports on the design and characterization of InGaAs/InP single photon avalanche diodes (SPADs) for photon counting applications Lit wavelengths near 1.5 mu m. It is shown how lower internal electric field amplitudes can lead to reduced dark count rates, but at the expense of degraded afterpulsing behaviour and larger timing jitter. Dark count rate behaviour provides evidence of thermally assisted tunnelling with an average thermal activation energy of similar to 0.14 eV between 150 K and 220 K. Afterpulsing behaviour exhibits a structure-dependent afterpulsing activation energy, which quantities how carrier de-trapping varies with temperature. SPAD performance simultancously exhibits a dark count rate of 10 kHz at a detection efficiency of 20\% with timing jitter of 100 ps at 200K, and with appropriate performance tradeoffs, we demonstrate a 200 K dark count rate as low as 3 kHz, a detection efficiency as high as 45\%, and a timing jitter as low as 30 ps.

@article{Itzler2007, abstract = {The paper reports on the design and characterization of InGaAs/InP single photon avalanche diodes (SPADs) for photon counting applications Lit wavelengths near 1.5 mu m. It is shown how lower internal electric field amplitudes can lead to reduced dark count rates, but at the expense of degraded afterpulsing behaviour and larger timing jitter. Dark count rate behaviour provides evidence of thermally assisted tunnelling with an average thermal activation energy of similar to 0.14 eV between 150 K and 220 K. Afterpulsing behaviour exhibits a structure-dependent afterpulsing activation energy, which quantities how carrier de-trapping varies with temperature. SPAD performance simultancously exhibits a dark count rate of 10 kHz at a detection efficiency of 20\% with timing jitter of 100 ps at 200K, and with appropriate performance tradeoffs, we demonstrate a 200 K dark count rate as low as 3 kHz, a detection efficiency as high as 45\%, and a timing jitter as low as 30 ps.}, added-at = {2009-09-04T22:06:29.000+0200}, address = {4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND}, affiliation = {Itzler, MA (Reprint Author), Princeton Lightware Inc, 2555 US Route 130 S, Cranbury, NJ 08512 USA. Princeton Lightware Inc, Cranbury, NJ 08512 USA. Politecn Milan, Dipartimento Elettr \& Informaz, I-20133 Milan, Italy. Credence Syst Corp, DCG, Sunnyvale, CA 94089 USA.}, author = {Itzler, M. A. and Ben-Michael, R. and Hsu, C. F. and Slomkowski, K. and Tosi, A. and Cova, S. and Zappa, F. and Ispasoiu, R.}, author-email = {mitzler@princetonlightwave.com}, biburl = {https://www.bibsonomy.org/bibtex/207b6aad2485b65a526b5dd13cce4cd77/scotbrad}, doc-delivery-number = {138UD}, doi = {10.1080/09500340600792291}, file = {[Itzler2007] SPADs for 1.5um photon counting apps.pdf:APD\\[Itzler2007] SPADs for 1.5um photon counting apps.pdf:PDF}, interhash = {703adf34b1cd84b54082cced9c9e7e66}, intrahash = {07b6aad2485b65a526b5dd13cce4cd77}, issn = {0950-0340}, journal = {JOURNAL OF MODERN OPTICS}, journal-iso = {J. Mod. Opt.}, keywords = {imported}, keywords-plus = {PHOTODIODES; PERFORMANCE; NOISE; MODE; TIME; GAIN}, language = {English}, month = {JAN 20}, number = {2-3}, number-of-cited-references = {19}, owner = {MI21953}, pages = {283-304}, publisher = {TAYLOR \& FRANCIS LTD}, subject-category = {Optics}, times-cited = {20}, timestamp = {2009-09-04T22:06:41.000+0200}, title = {Single photon avalanche diodes (SPADs) for 1.5 mu m photon counting applications}, type = {Article}, unique-id = {ISI:000244387900010}, volume = 54, year = 2007 }