%0 Journal Article %1 journals/iet-cds/RezaeiNR22 %A Rezaei, Farzaneh %A Nayeri, Fatemeh Dehghan %A Rezaeian, Adel %D 2022 %J IET Circuits Devices Syst. %K dblp %N 6 %P 491-499 %T A novel design of a silicon PIN diode for increasing the breakdown voltage. %U http://dblp.uni-trier.de/db/journals/iet-cds/iet-cds16.html#RezaeiNR22 %V 16

@article{journals/iet-cds/RezaeiNR22, added-at = {2022-10-24T00:00:00.000+0200}, author = {Rezaei, Farzaneh and Nayeri, Fatemeh Dehghan and Rezaeian, Adel}, biburl = {https://www.bibsonomy.org/bibtex/273faba622d82297464fce956a7776a25/dblp}, ee = {https://doi.org/10.1049/cds2.12120}, interhash = {7229741151b4822afd892e4feaa30029}, intrahash = {73faba622d82297464fce956a7776a25}, journal = {IET Circuits Devices Syst.}, keywords = {dblp}, number = 6, pages = {491-499}, timestamp = {2024-04-08T16:07:13.000+0200}, title = {A novel design of a silicon PIN diode for increasing the breakdown voltage.}, url = {http://dblp.uni-trier.de/db/journals/iet-cds/iet-cds16.html#RezaeiNR22}, volume = 16, year = 2022 }