%0 Journal Article %1 journals/ieicet/NegoroKMNASUT12 %A Negoro, Noboru %A Kuroda, Masayuki %A Murata, Tomohiro %A Nishijima, Masaaki %A Anda, Yoshiharu %A Sakai, Hiroyuki %A Ueda, Tetsuzo %A Tanaka, Tsuyoshi %D 2012 %J IEICE Trans. Electron. %K dblp %N 8 %P 1327-1331 %T K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W. %U http://dblp.uni-trier.de/db/journals/ieicet/ieicet95c.html#NegoroKMNASUT12 %V 95-C

@article{journals/ieicet/NegoroKMNASUT12, added-at = {2020-10-26T00:00:00.000+0100}, author = {Negoro, Noboru and Kuroda, Masayuki and Murata, Tomohiro and Nishijima, Masaaki and Anda, Yoshiharu and Sakai, Hiroyuki and Ueda, Tetsuzo and Tanaka, Tsuyoshi}, biburl = {https://www.bibsonomy.org/bibtex/2eccde08cfe53e66e6207a92c6714e14f/dblp}, ee = {http://search.ieice.org/bin/summary.php?id=e95-c_8_1327}, interhash = {7dbc57ae845a0849a2afcb3bfda220e8}, intrahash = {eccde08cfe53e66e6207a92c6714e14f}, journal = {IEICE Trans. Electron.}, keywords = {dblp}, number = 8, pages = {1327-1331}, timestamp = {2020-10-27T12:01:58.000+0100}, title = {K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W.}, url = {http://dblp.uni-trier.de/db/journals/ieicet/ieicet95c.html#NegoroKMNASUT12}, volume = {95-C}, year = 2012 }