%0 Journal Article %1 journals/mr/RenYZMG16 %A Ren, Jian %A Yan, Dawei %A Zhai, Yang %A Mou, Wenjie %A Gu, Xiaofeng %D 2016 %J Microelectron. Reliab. %K %P 82-86 %T Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes. %U http://dblp.uni-trier.de/db/journals/mr/mr61.html#RenYZMG16 %V 61

@article{journals/mr/RenYZMG16, added-at = {2023-12-13T03:00:12.000+0100}, author = {Ren, Jian and Yan, Dawei and Zhai, Yang and Mou, Wenjie and Gu, Xiaofeng}, biburl = {https://www.bibsonomy.org/bibtex/28d29ba304e7b0114abfbda136c9fca42/admin}, ee = {https://doi.org/10.1016/j.microrel.2015.11.005}, interhash = {8652ee158336d76da17eddd50b54cef7}, intrahash = {8d29ba304e7b0114abfbda136c9fca42}, journal = {Microelectron. Reliab.}, keywords = {}, pages = {82-86}, timestamp = {2023-12-13T03:00:12.000+0100}, title = {Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr61.html#RenYZMG16}, volume = 61, year = 2016 }